To realize profitable applications with 2D-materials the transition from research scale to microelectronic fabrication methods is needed. This means the use of equipment for larger substrates and assessment of the process flows. In this study we demonstrate an effective way to assess MoS2 as semiconducting material, deposited with the lower priced precursorsMo(CO)6 andH2S on 200mm silicon wafers.Wecould show how the evolution of layer quality develops depending on temperature and interface pretreatment. It is not possible to achieve mono-layers of 0.6nmwith high quality due to seeding kinetics and mechanism. In contrast, layers with thicknesses above 3nmhave suitable electrical and optical qualities to proceed with the design of active devices on 200mmwafers.
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